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Electrochemical charging of the single‐layer graphene membrane
Author(s) -
Komínková Zuzana,
Kalbáč Martin
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600191
Subject(s) - graphene , raman spectroscopy , materials science , substrate (aquarium) , electrode , layer (electronics) , graphene oxide paper , graphene nanoribbons , electrochemistry , chemical vapor deposition , membrane , chemical engineering , graphene foam , nanotechnology , optoelectronics , analytical chemistry (journal) , chemistry , optics , chromatography , biochemistry , oceanography , physics , engineering , geology
In situ Raman spectroelectrochemistry has been applied to study chemical vapor‐deposition‐grown single‐layer graphene membrane on a patterned SiO 2 /Si substrate. The SiO 2 /Si substrate is known to dope graphene, thus the substrate can significantly influence the properties of the graphene during electrochemical charging. We analyzed the change of the Raman intensity of the G mode as a function of electrode potential for a single‐layer graphene membrane and we compared the results to those obtained for the same graphene sample on a substrate. Because of the elimination of the influence of a supporting substrate we have been able to achieve more efficient doping of graphene by applied electrode potentials.