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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure
Author(s) -
Vainilovich Aliaksei G.,
Lutsenko Evgenii V.,
Pavlovskii Viacheslav N.,
Yablonskii Gennadii P.,
Alyamani Ahmed,
Aljohani Maher,
Aljariwi Abdulaziz,
Gronin Sergey V.,
Sorokin Sergey V.,
Sedova Irina V.,
Ivanov Sergey V.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600070
Subject(s) - materials science , optoelectronics , laser , heterojunction , quantum dot , laser diode , molecular beam epitaxy , energy conversion efficiency , optics , diode , epitaxy , physics , nanotechnology , layer (electronics)
A high‐efficiency microchip violet–green laser converter based on a molecular‐beam epitaxy grown green‐emitting (Zn)CdSe quantum dot (QD) II–VI laser heterostructure, optically pumped by emission of a cheap violet InGaN laser diode (LD) was demonstrated. The active region of the II–VI laser heterostructure consisted of three electronically coupled (Zn)CdSe QD sheets in a single ZnSe quantum well (QW) placed asymmetrically inside a graded‐index ZnMgSSe/ZnSe superlattice optical waveguide. The cavity length of the cleaved‐facet II–VI laser was 130 μm which is a nearly optimal value for minimizing the excitation power. InGaN LD radiation was focused into a narrow stripe on the surface of the II–VI laser by a microlens optical system. The converter showed laser emission at 541 nm with threshold excitation power of ∼0.5 W. The maximal output pulse power and conversion efficiency of 1.5 W and ∼15%, respectively, were achieved. The device was mounted in a standard TO‐18 LD package. Photograph of the operating violet–green microchip laser converter.