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The effect of the crystallographic orientation of ZnO on the surface adsorption and bulk diffusion of hydrogen
Author(s) -
Motin Md. A.,
Roy P. C.,
Kim C. M.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600062
Subject(s) - hydrogen , adsorption , crystallography , materials science , interstitial defect , chemical physics , thermal desorption , desorption , diffusion , crystal (programming language) , surface diffusion , chemistry , doping , thermodynamics , physics , optoelectronics , organic chemistry , computer science , programming language
The thermal reactions of surface and subsurface hydrogen atoms on ZnO have been investigated. When the (0001) and ( 10 1 ¯ 0 ) surfaces of ZnO are exposed to atomic hydrogen at 370 K, surface‐bound hydrogen atoms are formed on both surfaces. As the hydrogen exposure increases, H atoms diffuse into the bulk of ZnO. Upon heating, recombinative desorption of surface H atoms occurs at ∼450 K on both surfaces. Bulk H atoms also evolve as H 2 molecules. In the case of ZnO(0001), bulk hydrogen is completely removed below 750 K. Evolution of bulk hydrogen on the ( 10 1 ¯ 0 ) face of ZnO takes place at much higher temperatures. Our observations confirm that the migration of H atoms in the ZnO crystal lattice takes place mostly along the c ‐axis.