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Low wavenumber Raman spectroscopy of highly crystalline MoSe 2 grown by chemical vapor deposition (Phys. Status Solidi B 11/2015)
Author(s) -
O'Brien Maria,
McEvoy Niall,
Hanlon Damien,
Lee Kangho,
Gatensby Riley,
Coleman Jonathan N.,
Duesberg Georg S.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201570369
Subject(s) - raman spectroscopy , chemical vapor deposition , materials science , deposition (geology) , nanomaterials , spectroscopy , wavenumber , layer (electronics) , analytical chemistry (journal) , transition metal , nanotechnology , chemistry , optics , organic chemistry , paleontology , physics , quantum mechanics , sediment , biology , catalysis
Raman spectroscopy is a powerful tool for the characterisation of 2D nanomaterials, including transition metal dichalcogenides. Here, O'Brien et al. (pp. 2385–2389 ) use low wavenumber Raman spectroscopy to map high‐quality MoSe 2 crystals grown by chemical vapour deposition using a microreactor setup. Investigation of the shear and layer breathing modes gives information on the layer number of the crystals probed.