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Theory of semiconductor solid and hollow nano‐ and microwires with hexagonal cross‐section under torsion (Phys. Status Solidi B 4/2015)
Author(s) -
Grundmann Marius
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201570322
Subject(s) - wurtzite crystal structure , nanowire , materials science , torsion (gastropod) , condensed matter physics , hexagonal crystal system , semiconductor , nanotechnology , crystallography , optoelectronics , physics , chemistry , medicine , surgery
The Allen wrench or hex key (in German “Inbusschlüssel” after the 1936 patent for the “Innensechskantschraube Bauer und Schaurte”) is an everyday tool for fastening and unfastening respective screws. Its version scaled down by a factor of a thousand to a million is very much like a zinc oxide or gallium nitride [00.1]‐oriented or gallium or indium arsenide [111]‐oriented nanowire. The prismatic shaft has a regular hexagonal cross section. The effects of torque are possibly important in nano‐mechanical assemblies. The strain distribution and electronic properties have been worked out for such wires (see the paper by Marius Grundmann on pp. 773–785 ). The strain induced variation of band gap leads to carrier localization, enabling a new degree of freedom for laterally modulated nano‐ and microstructures. Charges and modulation of the potential due to piezoelectricity are, due to fundamental symmetry differences, present only in zincblende but not in wurtzite wires. In the paper also the effects of rounded edges and the strain in hollow hexagonal nanotubes are discussed.