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Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy
Author(s) -
Okada Narihito,
Ihara Hiroshi,
Yamane Keisuke,
Tadatomo Kazuyuki
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552783
Subject(s) - sapphire , epitaxy , materials science , radius , curvature , hydride , radius of curvature , substrate (aquarium) , metalorganic vapour phase epitaxy , susceptor , optoelectronics , phase (matter) , vapor phase , layer (electronics) , optics , chemistry , nanotechnology , geometry , mean curvature , physics , metal , laser , mathematics , metallurgy , computer security , oceanography , mean curvature flow , computer science , thermodynamics , organic chemistry , geology
GaN layers have been grown on double‐side‐polished sapphire substrates using hydride vapor phase epitaxy. The GaN layers on each side of the substrate were alternately grown using a new susceptor with a rotating mechanism. Although a conventional GaN layer grown on one side of a sapphire substrate exhibits a small radius of curvature, the alternately double‐sided‐grown GaN template exhibits a large radius of curvature. The radius of curvature of the alternately double‐sided‐grown GaN template with a thickness of 180 μm was found to be approximately 16.4 m, and was larger than the 0.5 m radius of curvature of the conventional GaN template.