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Nitrogen incorporation in SnO 2 thin films grown by chemical vapor deposition
Author(s) -
Jiang Jie,
Lu Yinmei,
Kramm Benedikt,
Michel Fabian,
Reindl Christian T.,
Kracht Max E.,
Klar Peter J.,
Meyer Bruno K.,
Eickhoff Martin
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552747
Subject(s) - x ray photoelectron spectroscopy , crystallite , chemical vapor deposition , raman spectroscopy , analytical chemistry (journal) , nitrogen , thin film , materials science , deposition (geology) , chemistry , crystallography , chemical engineering , nanotechnology , environmental chemistry , paleontology , physics , optics , organic chemistry , sediment , engineering , biology
The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO 2 –x N x thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO 2– x N x films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N 3 − ion in the SnN bond. The increase of the N atomic concentration x in SnO 2 –x N x films from 0 to 7.9 at.% without phase separation with increasing NH 3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.