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III‐nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy
Author(s) -
Shubina T. V.,
Jmerik V. N.,
Davydov V. Yu.,
Kazanov D. R.,
Smirnov A. N.,
Nechaev D. V.,
Kuznetsova N.,
Pozina G.,
Hemmingsson C.,
Ivanov S. V.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552657
Subject(s) - molecular beam epitaxy , materials science , fabrication , whispering gallery wave , optoelectronics , photoluminescence , nitride , optics , refractive index , beam (structure) , epitaxy , resonator , nanotechnology , layer (electronics) , physics , medicine , alternative medicine , pathology
This paper analyzes current trends in fabrication of III‐nitride microresonators exploiting whispering gallery modes. Novel cup‐cavities are proposed and their fabrication from GaN and InN by molecular beam epitaxy on patterned substrates is described. These cup‐cavities can concentrate the mode energy in a subwavelength volume. Their mode energies are stable up to room temperature, being identical in large microcrystals. In these cavities, mode switching can be realized by means of refractive index variation. Cup‐cavity modes, being inferior to plasmonic resonances in the respect of integral emission enhancement, have advantages for spectrally selective amplification of quantum transitions in site‐controlled nano‐emitters. Imaging (left) and high‐spatial‐resolution photoluminescence spectra (right) of an InN cup‐cavity.