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Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy
Author(s) -
Springbett Helen,
Griffiths James,
Ren Christopher,
O'Hanlon Tom,
Barnard Jonathan,
Sahonta SumanLata,
Zhu Tongtong,
Oliver Rachel
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552633
Subject(s) - transmission electron microscopy , epitaxy , polar , materials science , indium , ring (chemistry) , atomic force microscopy , etching (microfabrication) , crystallography , optoelectronics , nanotechnology , chemistry , layer (electronics) , physics , organic chemistry , astronomy
Droplets grown by modified droplet epitaxy on non‐polar (11‐20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring‐like structures. This work discusses droplet etching as a possible mechanism for ring formation, and droplet creeping as a possible explanation for the droplets sitting askew of the ring centre. Transmission electron microscopy (TEM) analysis shows the droplets to move along the 〈 0001 〉c ‐axis, and indicates that they have a very high indium content. The image shows atomic force microscopy (AFM) data of a double‐ring structure, rendered in 3D.