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Stable p‐type conductivity in B and N co‐doped ZnO epitaxial thin film
Author(s) -
Sahu Rajib,
Gholap Hari Bhau,
Mounika Gandi,
Dileep Krishnan,
Vishal Badri,
Ghara Somnath,
Datta Ranjan
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552625
Subject(s) - conductivity , torr , partial pressure , materials science , doping , pulsed laser deposition , epitaxy , stoichiometry , analytical chemistry (journal) , thin film , schottky diode , oxygen , vacancy defect , chemistry , crystallography , optoelectronics , nanotechnology , diode , physics , organic chemistry , layer (electronics) , chromatography , thermodynamics
We report on the observation of stable p‐type conductivity in B and N co‐doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (∼10 −1 Torr) shows p‐type conductivity with a carrier concentration of ∼3 × 10 16 cm −3 . This p‐type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V O ) and Schottky type‐I native defects compared to films grown at low oxygen partial pressure (∼10 −5 Torr). The p‐type conductivity is explained with the help of density functional theory (DFT) calculation considering off‐stoichiometric BN 1 + x in the ZnO lattice.