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Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy
Author(s) -
Kolhatkar Gitanjali,
Boucherif Abderraouf,
Ataellah Bioud Youcef,
Fafard Simon,
Ruediger Andreas,
Aimez Vincent,
Arès Richard
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552617
Subject(s) - annealing (glass) , molecular beam epitaxy , materials science , aluminium , epitaxy , electron mobility , nitride , chemical beam epitaxy , charge carrier density , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , nanotechnology , doping , layer (electronics) , chromatography
We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al 0.05 Ga 0.95 N 0.005 As 0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–V Ga complexes. After annealing, a mobility of 60 cm 2 V −1 s −1 for a hole concentration of 1 × 10 19 cm −3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.