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Spatially indirect transitions in electric field tunable quantum dot diodes
Author(s) -
Rai Ashish K.,
Gordon Simon,
Ludwig Arne,
Wieck Andreas D.,
Zrenner Artur,
Reuter Dirk
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552591
Subject(s) - wetting layer , quantum dot , quantum tunnelling , condensed matter physics , electric field , quantum dot laser , quantum point contact , diode , photoluminescence , resonant tunneling diode , electron , physics , materials science , quantum well , optoelectronics , semiconductor laser theory , optics , quantum mechanics , laser
We analyse an InAs/GaAs‐based electric field tunable single quantum dot diode with a thin tunnelling barrier between a buried n + ‐back contact and a quantum dot layer. In voltage‐dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.