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Amorphous thin films in the gallium–chalcogen system
Author(s) -
Popescu M.,
Sava F.,
Lőrinczi A.,
Velea A.,
Simandan I. D.,
Galca A. C.,
Matei E.,
Socol G.,
Gherendi F.,
Savastru D.,
Miclos S.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552551
Subject(s) - chalcogen , amorphous solid , gallium , materials science , extended x ray absorption fine structure , thin film , spectroscopy , analytical chemistry (journal) , absorption spectroscopy , absorption (acoustics) , ellipsometry , crystallography , chemistry , optics , nanotechnology , metallurgy , physics , quantum mechanics , composite material , chromatography
Thin amorphous films based on gallium–chalcogen (Ga–Ch), namely Ga 2 S 3 , Ga 2 Se 3 , Ga 2 Te 3 , and GaTe have been prepared by pulsed laser deposition (PLD). The films were characterized by X‐ray diffraction, extended X‐ray absorption fine structure (EXAFS), energy‐dispersive X‐ray spectroscopy (EDX), optical transmission spectroscopy, ellipsometry, and electrical measurements. Structural measurements showed that Ga is threefold coordinated, except the Te‐based alloys were, it seems, only twofold coordinated, while the chalcogen is usually twofold coordinated. In all the compositions, layered and chain‐like structures are assumed. The bandgaps range between 1.09 eV for Ga 2 Te 3 and 2.21 eV for Ga 2 Se 3 .