Premium
Electronic properties of defects in high‐fluence electron‐irradiated bulk GaN
Author(s) -
Duc Tran Thien,
Pozina Galia,
Son Nguyen Tien,
Ohshima Takeshi,
Janzén Erik,
Hemmingsson Carl
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552521
Subject(s) - fluence , annealing (glass) , irradiation , deep level transient spectroscopy , materials science , electron , electron beam processing , penning trap , electron capture , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , silicon , nuclear physics , physics , chromatography , composite material
Using deep‐level transient spectroscopy, deep levels and capture cross sections of defects introduced by high‐fluence electron irradiation of thick halide vapor‐phase epitaxy‐grown GaN has been studied. After irradiation with 2 MeV electrons to a high fluence of 5 × 10 16 cm −2 , four deep electron trap levels, labeled T1 ( E C − 0.13 eV), T2 ( E C − 0.18 eV), T3 ( E C − 0.26 eV), T4, and a broad band of peaks, labeled T5, consisting of at least two levels were observed. These defects, except T1 and T3, were annealed out after annealing at 650 K for 2 h. The levels T1, T3, and the broad peak T5 exhibits electric field‐enhanced emission The capture cross section is found to be temperature independent for T2 and T3, whereas T1 shows a decreasing capture cross section with increasing temperature, suggesting that electron capturing to T2 is governed by a cascade capturing process.