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Above‐Hg 1− x Cd x Te‐bandgap photoluminescence and interfacial channels in Hg 1− x Cd x Te–CdTe heterostructure
Author(s) -
Zhu Liang,
Chen Lu,
Zhu Liangqing,
Qi Zhen,
Chen Xiren,
Guo Shaoling,
He Li,
Shao Jun
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552515
Subject(s) - photoluminescence , passivation , heterojunction , optoelectronics , band gap , materials science , cadmium telluride photovoltaics , infrared , analytical chemistry (journal) , optics , layer (electronics) , chemistry , physics , nanotechnology , chromatography
HgCdTe–CdTe heterostructures are important for HgCdTe‐based low‐dimensional structures and infrared detectors. However, studies concerning parasitic heterostructure introduced by the passivation are very limited and within electrical characterizations. In this work, temperature‐dependent infrared photoluminescence (PL) measurements are performed on CdTe–passivated‐HgCdTe interfaces with 1064‐nm laser excitation. Besides the common HgCdTe band‐edge PL, abnormal PL features are observed about 100 meV above the HgCdTe band gap, which are active at low temperatures and accompanied by the quench of near‐band‐edge ones. Photoreflectance and temperature dependent PL analysis indicate that such abnormal features are from radiative recombinations between electrons in HgCdTe and holes in the passivation layer. Such channels compete severely with the near‐band‐edge ones, and may deteriorate the detector performance.