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Optical absorption and refractive index changes in a semiconductor quantum ring: Electric field and donor impurity effects
Author(s) -
Acosta Rubén E.,
Morales A. L.,
Duque C. M.,
MoraRamos M. E.,
Duque C. A.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552514
Subject(s) - refractive index , hamiltonian (control theory) , electric field , impurity , wave function , absorption (acoustics) , semiconductor , quantum dot , effective mass (spring–mass system) , atom (system on chip) , ionized impurity scattering , physics , atomic physics , condensed matter physics , optics , quantum mechanics , mathematics , mathematical optimization , computer science , embedded system
The electron states in a two‐dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the diagonalization of the problem Hamiltonian using a 2D expansion. The impurity‐related optical response is analyzed via the optical absorption and relative refractive index coefficients.