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Charge compensating defects study of YbF 3 ‐doped BaF 2 crystals using dielectric loss
Author(s) -
Nicoara Irina,
Stef Marius
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552507
Subject(s) - dielectric , relaxation (psychology) , doping , materials science , absorption (acoustics) , analytical chemistry (journal) , ion , dielectric loss , dipole , absorption spectroscopy , charge (physics) , chemistry , optics , optoelectronics , physics , quantum mechanics , psychology , social psychology , organic chemistry , chromatography , composite material
YbF3 ‐doped BaF2 crystals with various concentrations of YbF3 (0.05, 0.1, 0.17, 0.2 mol % ) have been grown using the conventional Bridgman method. Dielectric relaxation is used to study the charge compensating defects in BaF2 crystals with low YbF3 concentration. The optical absorption spectra reveal the existence of both Yb2 +(in UV domain) and Yb3 +(in IR domain) ions. In the investigated temperature range (150–320 K) we have observed only one type of dielectric relaxation. This relaxation with activation energy E = 0.54 eV is associated with trigonal‐type ( C 3 v ) centers. The charge compensating defects are discussed while taking also into account the optical absorption spectra and the calculated number of NNN dipoles whose relaxation is observed.