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Dependence of minority carrier lifetime of Be‐doped InAs/InAsSb type‐II infrared superlattices on temperature and doping density
Author(s) -
Connelly Blair C.,
Steenbergen Elizabeth H.,
Smith Howard E.,
Elhamri Said,
Mitchel William C.,
Mou Shin,
Metcalfe Grace D.,
Brown Gail J.,
Wraback Michael
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552497
Subject(s) - superlattice , doping , photoluminescence , carrier lifetime , materials science , dopant , optoelectronics , charge carrier density , silicon
We investigate the minority carrier lifetime of Be‐doped InAs/InAsSb type‐II superlattices as a function of doping density and temperature using time‐resolved photoluminescence (TRPL) to determine if switching the superlattice type from the typical n‐type residual carrier concentration to p‐type may improve device performance by improving the lifetime–mobility product. The introduction of the Be dopant to the superlattice reduces the carrier lifetime, first by a factor of ∼3 for doping densities near or below the n‐type residual carrier concentration, then by an order of magnitude for samples doped well above the residual carrier concentration. Further, the higher‐doped p‐type samples demonstrate two distinct TRPL decay regimes and two peaks in the PL spectra, suggesting the formation of an additional acceptor‐related recombination pathway leading to the observed shorter carrier lifetime.