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Morphology of second‐phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth
Author(s) -
Wang Shujie,
Sun Niefeng,
Gao Linjie,
Liu Xinhui,
Shi Yanlei,
Li Xiaolan,
Shao Huimin,
Wang Yang,
Fu Lijie,
Liu Huisheng,
Sun Tongnian
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552494
Subject(s) - materials science , dislocation , indium , phase (matter) , in situ , particle (ecology) , crystallite , crystallography , morphology (biology) , crystal (programming language) , crystal growth , particle size , chemical engineering , chemistry , composite material , metallurgy , geology , organic chemistry , paleontology , oceanography , computer science , engineering , programming language
In this paper, indium (In)‐rich second‐phase particles are observed in InP crystals, which is induced by the loss of phosphorus (P) during polycrystalline melting. Their characterizations reveal that the size of these In‐rich particles is 200 nm–20 µm. The dislocation structure surrounding the second‐phase particle and its formation is explained by the model of prismatic dislocation loop. The indium‐rich second‐phase particles could be eliminated under P‐rich condition by a rapid in situ P injection before crystal growth. Excessive P injection will lead to the formation of P pores with internal P deposits. The optimal injection value is given to eliminate the defects.