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Temperature‐dependent cathodoluminescence investigation of Er‐implanted GaN thin films
Author(s) -
Mo Yajuan,
Wang Xiaodan,
Yang Mingming,
Zeng Xionghui,
Wang Jianfeng,
Xu Ke
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552470
Subject(s) - cathodoluminescence , materials science , luminescence , excited state , doping , spectral line , analytical chemistry (journal) , emission spectrum , thin film , optoelectronics , chemistry , atomic physics , nanotechnology , physics , chromatography , astronomy
In this paper, temperature‐dependent cathodoluminescence (CL) spectra of Er‐implanted GaN thin films were measured. The effects of accelerating voltage and temperature on the CL spectra of Er‐implanted GaN were investigated. In the near band‐edge emission region, the competition mechanism between DAP and D 0 X was disclosed. A slight blue shift of the DAP emission peak with the increase of accelerating voltage was observed. The temperature dependence of the CL intensity of FX emission reveals a binding energy of ∼32 meV in Er‐implanted GaN. Below 182 K, the 2 H 11/2 state of Er 3+ is not thermally populated and the yellow band luminescence (YL) related to the defects was observed. At higher temperature, the thermal coupling between the two excited state levels of 2 H 11/2 and 4 S 3/2 of Er 3+ is obvious and the YL is nearly invisible. Even at 373 K, a strong green emission at 537 nm can be observed, which indicates the Er‐doped GaN is promising to be applied in high‐temperature environments.