Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A | Zendy

Yamada Hisashi | Zendy; Ichikawa Osamu | Zendy; Fukuhara Noboru | Zendy; Hata Masahiko | Zendy

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Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

Author(s) -

Yamada Hisashi,

Ichikawa Osamu,

Fukuhara Noboru,

Hata Masahiko

Publication year - 2016

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201552466

Subject(s) - hillock , vicinal , materials science , indium phosphide , chemical vapor deposition , crystallinity , metalorganic vapour phase epitaxy , stacking , optoelectronics , epitaxy , crystallography , chemistry , gallium arsenide , nanotechnology , organic chemistry , layer (electronics) , composite material

The formation and reduction of pyramidal hillocks on InGaAs/InP(111)A grown by metal organic chemical vapor deposition were investigated. The triangular pyramidal hillocks were observed on the InGaAs surface on on‐axis InP (111)A grown at 650 °C. The hillocks disappeared when the vicinal InP (111)A substrates with an off‐axis angle >0.4° were applied. The step and terrace surface of InGaAs on 4.0°‐off InP (111)A were obtained. InGaAs on on‐axis InP (111)A exhibited a hole concentration, mobility of Hall effect measurement, and full width at half‐maximum of X‐ray diffraction as 1.0 × 10 17 cm −3 , 56 cm 2 /V s, and 140 arcsec, respectively. In contrast, InGaAs on 2.0°‐off InP (111)A exhibited 2.3–10 17 cm −3 , 142 cm 2 /V s, and 63 arcsec, respectively. We suggest that off‐axis substrates enable a reduction of stacking faults, which leads to considerable improvement of crystallinity.

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