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Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A
Author(s) -
Yamada Hisashi,
Ichikawa Osamu,
Fukuhara Noboru,
Hata Masahiko
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552466
Subject(s) - hillock , vicinal , materials science , indium phosphide , chemical vapor deposition , crystallinity , metalorganic vapour phase epitaxy , stacking , optoelectronics , epitaxy , crystallography , chemistry , gallium arsenide , nanotechnology , organic chemistry , layer (electronics) , composite material
The formation and reduction of pyramidal hillocks on InGaAs/InP(111)A grown by metal organic chemical vapor deposition were investigated. The triangular pyramidal hillocks were observed on the InGaAs surface on on‐axis InP (111)A grown at 650 °C. The hillocks disappeared when the vicinal InP (111)A substrates with an off‐axis angle >0.4° were applied. The step and terrace surface of InGaAs on 4.0°‐off InP (111)A were obtained. InGaAs on on‐axis InP (111)A exhibited a hole concentration, mobility of Hall effect measurement, and full width at half‐maximum of X‐ray diffraction as 1.0 × 10 17 cm −3 , 56 cm 2 /V s, and 140 arcsec, respectively. In contrast, InGaAs on 2.0°‐off InP (111)A exhibited 2.3–10 17 cm −3 , 142 cm 2 /V s, and 63 arcsec, respectively. We suggest that off‐axis substrates enable a reduction of stacking faults, which leads to considerable improvement of crystallinity.