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Nanoscale cathodoluminescence of stacking faults and partial dislocations in a ‐plane GaN
Author(s) -
Schmidt Gordon,
Veit Peter,
Wieneke Matthias,
Bertram Frank,
Dadgar Armin,
Krost Alois,
Christen Jürgen
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552451
Subject(s) - cathodoluminescence , wurtzite crystal structure , materials science , stacking , partial dislocations , stacking fault , heterojunction , condensed matter physics , superstructure , scanning transmission electron microscopy , dislocation , optoelectronics , crystallography , transmission electron microscopy , molecular physics , luminescence , chemistry , nanotechnology , composite material , physics , zinc , organic chemistry , metallurgy , thermodynamics
In GaN, the basal plane stacking fault type I 1 is a two‐dimensional defect characterized by a cubic inclusion within the wurtzite structure. Excitons are bound at the BSF I 1 similar to the localization in a quantum well heterostructure leading to an efficient radiative recombination. In this study, we present the optical and structural properties of basal plane stacking faults occurrent in silicon doped a ‐plane GaN layer by means of highly spatially resolved cathodoluminescence spectroscopy performed in a scanning transmission electron microscope. Drastically reduced panchromatic intensity in the vicinity of partial dislocations terminating the stacking faults, points to their non‐radiative character. Originating from intersection of two‐dimensional defects, the emission at 379.6 nm could be attributed to optically active stair‐rod dislocations.