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Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam
Author(s) -
Uedono Akira,
Takashima Shinya,
Edo Masaharu,
Ueno Katsunori,
Matsuyama Hideaki,
Kudo Hiroshi,
Naramoto Hiroshi,
Ishibashi Shoji
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552345
Subject(s) - vacancy defect , ion implantation , materials science , annealing (glass) , doping , photoluminescence , positron , ion , crystallographic defect , crystallography , analytical chemistry (journal) , optoelectronics , metallurgy , chemistry , electron , nuclear physics , physics , organic chemistry , chromatography
Vacancy‐type defects in Mg‐implanted GaN were probed using a monoenergetic positron beam. Mg ions of multiple energies (15–180 keV) were implanted to provide a 200‐nm‐deep box profile with Mg concentration of 4 × 10 19 cm −3 . The major defect species of vacancies introduced by Mg‐implantation was a complex between Ga‐vacancy ( V Ga ) and nitrogen vacancies ( V N s). After annealing above 1000 °C, these defects started to agglomerate, and the major defect species became ( V Ga ) 2 coupled with V N s. The defect reaction occurred between not only the defects introduced by the implantation but also the defects introduced by an excess Mg‐doping. The depth distribution of vacancy‐type defects agreed well with that of implanted Mg, and no large change in the distribution was observed up to 1300°C annealing. Relationships between photoluminescence bands and vacancy‐type defects introduced by Mg‐implantation are also discussed.