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Doping‐ and interference‐free measurement of I 2 D / I G in suspended monolayer graphene blisters
Author(s) -
Metten Dominik,
Froehlicher Guillaume,
Berciaud Stéphane
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552314
Subject(s) - blisters , graphene , monolayer , doping , interference (communication) , materials science , optoelectronics , nanotechnology , composite material , electrical engineering , engineering , channel (broadcasting)
We report on strong interference effects on the ratio of the integrated intensities of the Raman 2D‐ and G‐mode features (herein denoted I 2 D / I G ) in suspended graphene monolayers. Free from substrate‐induced doping and residual charge inhomogeneity, suspended samples are an ideal platform to study the intrinsic properties of graphene. Here, we demonstrate thatI 2 D / I G , measured on a pressurized suspended graphene blister, depends very sensitively on the distance between the bulged graphene membrane and the underlying substrate. The data obtained on three different samples are fit to theoretically predicted Raman enhancement factors and allow to extract an intrinsic , i.e., doping‐ and interference‐free, value ofI 2 D / I Gintr = 5 ± 1 for undoped, unscreened graphene at a laser photon energy of 2.33 eV .