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Simulation of an indium gallium nitride quantum well light‐emitting diode with the non‐equilibrium Green's function method
Author(s) -
Shedbalkar Akshay,
Andreev Zhelio,
Witzigmann Bernd
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552276
Subject(s) - indium gallium nitride , gallium nitride , light emitting diode , wurtzite crystal structure , indium , optoelectronics , quantum well , quantum tunnelling , diode , quantum , electric field , physics , materials science , statistical physics , quantum mechanics , nanotechnology , layer (electronics) , laser , diffraction
This work presents a quantum mechanical simulation of an indium gallium nitride (InGaN) based light‐emitting diode (LED) using the non‐equilibrium Green's function (NEGF) method. Due to the wurtzite crystal structure, such LEDs exhibit strong polarization‐induced electric fields at heterointerfaces. Standard simulation methods based on the drift‐diffusion (DD) model do not take into account potentially important transport mechanisms such as quantum mechanical tunneling or non‐equilibrium carrier distributions in the device. These effects are included in the NEGF model, while the semi‐classical models employ parametrized approximations. In principle, the NEGF simulation therefore allows a more realistic view of the physical process that take place in the LEDs.