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Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate
Author(s) -
Hashimoto Yasuhiro,
Yamane Keisuke,
Okada Narihito,
Tadatomo Kazuyuki
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552271
Subject(s) - metalorganic vapour phase epitaxy , materials science , layer (electronics) , optoelectronics , epitaxy , substrate (aquarium) , sapphire , crystal (programming language) , gallium nitride , nanotechnology , laser , optics , oceanography , physics , geology , computer science , programming language
In this article, we present a semipolar {20–21} GaN layer and {20–2–1} GaN layer for large GaN substrates. The {20–21} GaN layer was fabricated on {22–43} patterned sapphire substrates (PSSs) by metal‐organic vapor‐phase epitaxy (MOVPE) and hydride vapor‐phase epitaxy (HVPE). We found that the surface roughening and crack generation during the HVPE growth were suppressed by the formation of SiO 2 ‐striped masks parallel to the c ‐axis on the MOVPE‐grown {20–21} GaN template. Furthermore, we demonstrated millimeter‐thick crystal growth on a {20–21} GaN layer and a {20–2–1} GaN layer on a GaN substrate using HVPE. The dark‐spot density in the {20–2–1} GaN layer was approximately 9.6 × 10 6 cm −2 for 960 min growth. The dark‐spot density in the {20–2–1} GaN layer decreased more rapidly than that in the {20–21} GaN layer as growth thickness increased.