Premium
Internal quantum efficiency and carrier injection efficiency of c ‐plane, { 10 1 ‾ 1 } and { 11 2 ‾ 2 } InGaN/GaN‐based light‐emitting diodes
Author(s) -
Wang Junjun,
Meisch Tobias,
Heinz Dominik,
Zeller Raphael,
Scholz Ferdinand
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552187
Subject(s) - light emitting diode , electroluminescence , optoelectronics , quantum efficiency , materials science , diode , photoluminescence , wide bandgap semiconductor , planar , plane (geometry) , layer (electronics) , nanotechnology , computer science , mathematics , computer graphics (images) , geometry
The electroluminescence (EL) output power of c ‐plane InGaN/GaN‐based light‐emitting diodes (LEDs) is much higher than that of semipolar { 10 1 ‾ 1 } and { 11 2 ‾ 2 } LEDs at the same operation current. In order to elucidate the reasons for this behavior, we have fitted the pulsed EL data by the well‐known ABC model to extract the internal quantum efficiency (IQE) and the carrier injection efficiency (CIE) to clarify which parameter weighs more for the poor EL output power of the semipolar LEDs. The CIE shows large differences, 78%, 4%, and 4% for the c ‐plane, { 10 1 ‾ 1 } and { 11 2 ‾ 2 } LEDs, respectively, whereas the IQE values are fairly the same for all three structures. The fit of resonant photoluminescence (PL) data at room temperature confirms the similar IQE values for all three structures. The CIE was increased from 4% to 10% for the planar { 11 2 ‾ 2 } LED with better electrical conductivity of the p ‐GaN layer.