Crystal orientations of β‐Ga 2 O 3  thin films formed on  n ‐plane sapphire substrates | Zendy

Nakagomi Shinji | Zendy; Kaneko Satoru | Zendy; Kokubun Yoshihiro | Zendy

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Crystal orientations of β‐Ga 2 O 3 thin films formed on n ‐plane sapphire substrates

Author(s) -

Nakagomi Shinji,

Kaneko Satoru,

Kokubun Yoshihiro

Publication year - 2015

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201552168

Subject(s) - sapphire , crystal (programming language) , materials science , gallium , plane (geometry) , thin film , crystallography , evaporation , crystal structure , optics , chemistry , geometry , physics , nanotechnology , laser , mathematics , computer science , thermodynamics , programming language , metallurgy

We have used X‐ray pole figure analysis to study crystal orientations of β‐Ga 2 O 3 thin films deposited on (113) n ‐plane sapphire substrates by gallium evaporation in oxygen plasma. The films were strongly (−201)‐oriented. However, the (−201) plane of β‐Ga 2 O 3 on the (113) n ‐plane sapphire was inclined along the (110) a ‐plane. Crystals of (−201)‐oriented β‐Ga 2 O 3 exhibit a threefold symmetry in which the β‐Ga 2 O 3 crystal is rotated by increments of 120° from the direction of the c ‐axis on the a ‐plane of sapphire. The crystal orientation of β‐Ga 2 O 3 was explained by comparing oxygen atom arrangements on the β‐Ga 2 O 3 plane in three different configurations and on the (113) n ‐plane sapphire substrates.

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