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A study of the piezoelectric properties of semipolar 11 2 ̅ 2 GaN/AlN quantum dots
Author(s) -
Young T. D.,
Jurczak G.,
Lotsari A.,
Dimitrakopulos G. P.,
Komninou Ph.,
Dłużewski P.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552156
Subject(s) - quantum dot , piezoelectricity , condensed matter physics , materials science , quantum point contact , quantum , enhanced data rates for gsm evolution , strain (injury) , optoelectronics , physics , quantum well , optics , quantum mechanics , composite material , telecommunications , laser , computer science , medicine
GaN quantum dots grown in ( 11 2 ̅ 2 )’orientated AlN are studied. The ( 11 22 ‾ ) ‐nucleated quantum dots exhibit rectangular‐ or trapezoid‐based truncated pyramidal morphology. Another quantum dot type orientated on ( 10 11 ‾ ) is reported. Based on high‐resolution transmission microscopy and crystal symmetry, the geometry of ( 10 11 ‾ ) ‐orientated quantum dots is proposed. A piezoelectric model is used within a finite element method to determine and compare the strain‐state and electrostatic potential associated with the quantum dot morphology and an estimation of the band‐edge energy is made. We report on some novel properties of the ( 10 11 ‾ ) ‐orientated quantum dot, including mixed strain‐states and strain‐state bowing.