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The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Author(s) -
Ardali S.,
Atmaca G.,
Lisesivdin S. B.,
Malin T.,
Mansurov V.,
Zhuravlev K.,
Tiras E.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552135
Subject(s) - passivation , heterojunction , materials science , molecular beam epitaxy , doping , barrier layer , optoelectronics , electron mobility , hall effect , layer (electronics) , electron diffraction , atmospheric temperature range , diffraction , epitaxy , condensed matter physics , nanotechnology , electrical resistivity and conductivity , optics , electrical engineering , physics , engineering , meteorology
The effects of surface passivation effect on electron mobility and crystal structure in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X‐ray diffraction method. Al 0.3 Ga 0.7 N/AlN/GaN heterostructures with different doping and layer structures were grown by molecular beam epitaxy with or without growing an in situ SiN passivation layer. The classical Hall effect measurements were carried out as a function of temperature in the range between T = 1.82 K and 270 K at a fixed magnetic field in dark conditions. The effect of doping of the barrier layer and replacing an AlN inter‐layer between the AlGaN barrier and the GaN layer, where the two‐dimensional electron gas is populated, on mobility and sheet carrier concentration were also determined.