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Polycrystalline bismuth films: Correlation between grain structure and electron transport
Author(s) -
Fedotov A. S.,
Poznyak S. K.,
Tsybulskaya L. S.,
Shepelevich V. G.,
Svito I. A.,
Saad A.,
Mazanik A. V.,
Fedotov A. K.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552051
Subject(s) - condensed matter physics , grain boundary , materials science , bismuth , magnetoresistance , crystallite , scattering , seebeck coefficient , electrical resistivity and conductivity , electron , charge carrier , grain size , composite material , magnetic field , optics , metallurgy , physics , microstructure , thermal conductivity , quantum mechanics
Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge‐carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L‐band electrons and neglecting the influence of L‐band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain‐boundary density.