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Isotopic study of mid‐infrared vibrational modes in GaAs related to carbon and nitrogen impurities
Author(s) -
Alt H. Ch.,
Wagner H. E.,
Glacki A.,
FrankRotsch Ch.,
Häublein V.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201552028
Subject(s) - infrared , nitrogen , infrared spectroscopy , impurity , carbon fibers , absorption (acoustics) , analytical chemistry (journal) , fourier transform infrared spectroscopy , molecular vibration , materials science , doping , chemistry , molecule , optics , optoelectronics , organic chemistry , physics , composite number , composite material
Fourier transform infrared absorption measurements have been carried out on GaAs crystals doped or implanted with carbon, nitrogen and oxygen. In the presence of carbon and nitrogen, thermally stable defects occur with strong molecular‐like bonding giving rise to absorption bands of vibrational character in the mid‐infrared. By implantation of the nitrogen isotopes 14 N and 15 N, a complex of the chemical composition CN 2 is identified. This defect is the origin for the mode at 2060 cm −1 previously attributed to a (C, O)‐complex. A further absorption band at 1973 cm −1 is tentatively attributed to the stretching mode of a CN entity.