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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon (Phys. Status Solidi B 11/2014)
Author(s) -
Sueoka Koji,
Kamiyama Eiji,
Vanhellemont Jan,
Nakamura Kozo
Publication year - 2014
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201470167
Subject(s) - dopant , materials science , crystallographic defect , doping , silicon , crystal (programming language) , stress (linguistics) , condensed matter physics , single crystal , thermal , crystallography , thermodynamics , chemistry , physics , optoelectronics , linguistics , philosophy , computer science , programming language
For the mass‐production of high‐quality large‐diameter Si crystals, one has to take into account the impact of thermal stress and dopants on intrinsic point defect properties and behavior during single crystal growth from a melt. Density functional theory based calculations for point defects in Si crystal models under plane stress considering the distance from p‐type (B, Ga), neutral (C, Ge, Sn) and n‐type (P, As, Sb, Bi) dopants were performed to improve the Voronkov model (see the Feauture Article by Sueoka et al. on pp. 2159–2168 ). The calculated plane stress dependence is in excellent agreement with the published experimental values and should be taken into account in the development of pulling processes for 450 mm diameter defect‐free Si crystals. The Voronkov model, while taking into account the present improvements, clearly explains all reported experimental results on grown‐in defects for heavily doped Si. The most important remaining problems with respect to intrinsic point defect behavior and properties during single crystal growth from a melt are also discussed.