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Thick (~1 μm) p‐type In x Ga 1– x N ( x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)
Author(s) -
Yamamoto A.,
Hasan T. Md.,
Kodama K.,
Shigekawa N.,
Kuzuhara M.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451736
Subject(s) - metalorganic vapour phase epitaxy , annealing (glass) , analytical chemistry (journal) , doping , materials science , chemistry , epitaxy , metallurgy , nanotechnology , optoelectronics , chromatography , layer (electronics)
This paper reports the post‐growth annealing effects of low‐temperature grown Mg‐doped InGaN. By using MOVPE, 1 μm‐thick Mg‐doped In x Ga 1– x N ( x ~ 0.36) films are grown at 570 °C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 °C for 20 min, the InGaN film is phase‐separated. On the other hand, the RTA at a temperature higher than 700 °C enables us to get p‐type samples. By using the RTA at 850 for 20 s, p‐type samples with a hole concentration 10 18 –10 19 cm −3 are successfully obtained without phase separation.