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HgGa 2 Se 4 under high pressure: An optical absorption study
Author(s) -
Gomis O.,
Vilaplana R.,
Manjón F. J.,
RuizFuertes J.,
PérezGonzález E.,
LópezSolano J.,
Bandiello E.,
Errandonea D.,
Segura A.,
RodríguezHernández P.,
Muñoz A.,
Ursaki V. V.,
Tiginyanu I. M.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451714
Subject(s) - chalcopyrite , band gap , absorption (acoustics) , materials science , vacancy defect , attenuation coefficient , high pressure , analytical chemistry (journal) , absorption spectroscopy , chemistry , crystallography , optics , optoelectronics , thermodynamics , metallurgy , physics , chromatography , copper , composite material
High‐pressure optical absorption measurements have been performed in defect chalcopyrite HgGa 2 Se 4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure‐induced order–disorder processes that occur in this ordered‐vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure‐induced disorder process at 15.4 and 30.8 GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1 GPa were around 0.15 and 0.23 eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the direct bandgap than the original sample. A comprehensive explanation for these results on the basis of pressure‐induced order–disorder processes is provided.