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In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates
Author(s) -
Lilja Louise,
Hassan Jawad Ul,
Janzén Erik,
Bergman J. Peder
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451710
Subject(s) - stacking , materials science , photoluminescence , cathodoluminescence , substrate (aquarium) , epitaxy , crystallography , optoelectronics , stacking fault , synchrotron , layer (electronics) , optics , nanotechnology , chemistry , luminescence , geology , physics , oceanography , organic chemistry
4H‐SiC epilayers were grown on 2° off‐cut substrates using standard silane/propane chemistry, with the aim of characterizing in‐grown stacking faults. The stacking faults were analyzed with low temperature photoluminescence spectroscopy, room temperature photoluminescence mappings, room temperature cathodoluminescence and synchrotron white beam X‐ray topography. At least three different types of in‐grown stacking faults were observed, including double Shockley stacking faults, triple Shockley stacking faults and bar‐shaped stacking faults. Those stacking faults are all previously found in 4° and 8° off‐cut epilayers; however, the geometrical size is larger in epilayers grown on 2° off‐cut substrates due to lower off‐cut angle. The stacking faults were formed close to the epilayer/substrate interface during the epitaxial growth.