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Effect of chlorine doping on electrodeposited cuprous oxide thin films on Ti substrates
Author(s) -
Jayathilaka K.M.D.C.,
Jayasinghe A.M.R.,
Sumanasekara G.U.,
Kapaklis V.,
Siripala W.,
Jayanetti J.K.D.S.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451646
Subject(s) - thin film , dielectric spectroscopy , materials science , photocurrent , x ray photoelectron spectroscopy , crystallite , doping , linear sweep voltammetry , analytical chemistry (journal) , conductivity , cyclic voltammetry , chemical bath deposition , oxide , electrical resistivity and conductivity , inorganic chemistry , electrochemistry , chemical engineering , chemistry , nanotechnology , electrode , metallurgy , optoelectronics , engineering , electrical engineering , chromatography
Highly photoactive Cl‐doped Cu 2 O films were electrodeposited potentiostatically on Ti substrates. Optimum deposition potential was determined by Linear‐Sweep Voltammetry measurements. The influence of chlorine doping on grain size, crystallite shape and orientation was examined using scanning electron microscopy and X‐ray diffraction. X‐ray photoelectron spectroscopy confirmed the presence of Cl due to doping. Mott–Schottky electrochemical impedance analysis showed the p‐type conductivity for undoped Cu 2 O films and n‐type conductivity for Cl‐doped Cu 2 O films. Analysis also showed that the carrier concentration of Cu 2 O thin films varied with Cl concentration of the deposition bath. Spectral responses of the resulting films were investigated in a photo‐electrochemical cell to optimize the CuCl 2 concentration of the deposition bath to obtain highly photoactive films. Photocurrent measurements further confirmed that the conductivity of these Cl‐doped Cu 2 O films was n‐type while undoped films showed p‐type conductivity at a bath pH 9.3. The resistivity of Cu 2 O films decreased with the Cl concentration and the resistivity obtained for the Cl‐doped Cu 2 O films with the highest photoactivity was about 10 2 Ωcm at 30 °C. The low resistance and high photoactivity of Cl‐doped cuprous oxide thin films make them more suitable for solar cell and other applications.