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Nanorippling of ion irradiated GaAs (001) surface near the sputter‐threshold energy
Author(s) -
Chowdhury Debasree,
Ghose Debabrata,
Mollick Safiul Alam,
Satpati Biswarup,
Bhattacharyya Satya Ranjan
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451612
Subject(s) - ripple , ion , irradiation , materials science , sputtering , diffusion , surface (topology) , atomic physics , chemistry , thin film , physics , nanotechnology , geometry , mathematics , organic chemistry , quantum mechanics , voltage , nuclear physics , thermodynamics
Ripple formation driven by Ehrlich–Schwoebel barrier is evidenced for normal incidence 30 eV Ar + bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the twofold symmetry of the bombarded crystal surface. The ridges of the ripples are found to align along the ⟨ 1 1 ¯ 0 ⟩ direction. The results are described by a non‐linear continuum equation based on biased diffusion of adspecies created by ion impact. Ripple topography on ion bombarded GaAs (001) surface: AFM image (left panel) and XTEM image (right panel).