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Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed
Author(s) -
Sochacki Tomasz,
Amilusik Mikolaj,
Fijalkowski Michal,
Iwinska Malgorzata,
Lucznik Boleslaw,
Weyher Jan L.,
Kamler Grzegorz,
Kucharski Robert,
Grzegory Izabella,
Bockowski Michal
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451604
Subject(s) - materials science , dislocation , epitaxy , gallium nitride , optoelectronics , layer (electronics) , substrate (aquarium) , crystallography , composite material , chemistry , oceanography , geology
It is demonstrated in this paper that 1.9‐mm‐thick gallium nitride grown by Hydride Vapor Phase Epitaxy (HVPE) on an ammonothermally grown GaN seed can reproduce the structural, in terms of defects, properties of the seed. The etch pit density and its correlation to the threading dislocation density in the ammonothermal GaN substrate and the HVPE‐GaN layer is presented and analyzed. However, it has recently been observed that for HVPE‐GaN thicker than 2 mm some additional defects are formed in the new grown material. Therefore, three HVPE growth runs were performed in the same experimental conditions, using three structurally identical ammonothermally grown GaN seeds of different thicknesses. The influence of the thickness of the seeds on the crystallization process and the properties of the HVPE‐GaN layers is shown and discussed.