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Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties
Author(s) -
Coulon PierreMarie,
Alloing Blandine,
Brändli Virginie,
Lefebvre Denis,
Chenot Sébastien,
ZúñigaPérez Jesús
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451589
Subject(s) - metalorganic vapour phase epitaxy , nanowire , materials science , epitaxy , growth rate , homogeneity (statistics) , sapphire , optoelectronics , volumetric flow rate , polar , perpendicular , nanotechnology , layer (electronics) , optics , geometry , laser , statistics , mathematics , physics , quantum mechanics , astronomy
Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c ‐axis, could be further controlled using appropriate growth temperatures and H 2 /N 2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.