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Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method
Author(s) -
Dashdorj J.,
Zvanut M. E.,
Bockowski M.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451567
Subject(s) - electron paramagnetic resonance , acceptor , impurity , materials science , crystallographic defect , analytical chemistry (journal) , doping , isotropy , nitrogen , spectroscopy , valence (chemistry) , crystallography , chemistry , nuclear magnetic resonance , condensed matter physics , optoelectronics , optics , physics , organic chemistry , chromatography , quantum mechanics
A point defect in acceptor‐doped bulk free standing GaN grown by the high nitrogen pressure solution method (HNPS) was investigated using electron paramagnetic resonance (EPR) spectroscopy. A nearly isotropic spectrum with g ‐value of 1.984 is observed after illumination with 2.8 eV light and is stable after removal of the light. Comparison with earlier work on p ‐type GaN films and SIMS data on the HNPS substrates suggests that the defect is related to an acceptor, heavily compensated during growth by oxygen. Time‐dependent photo‐EPR data are well modeled as a single defect‐to‐band transition where the defect level is 0.67 eV above the valence band edge. Although Mg‐ and Be‐doped samples were studied, only those samples containing Be produced the EPR signal. This observation, coupled with the similarity of the defect level measured to that predicted from the theory of others, suggests that the defect is related to a Be impurity.