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On the behavior of silicon donor in conductive Al x Ga 1– x N (0.63 ≤ x ≤ 1)
Author(s) -
Nilsson D.,
Trinh X. T.,
Janzén E.,
Son N. T.,
KakanakovaGeorgieva A.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451559
Subject(s) - silicon , electrical resistivity and conductivity , impurity , analytical chemistry (journal) , electron paramagnetic resonance , materials science , chemical vapor deposition , doping , activation energy , shallow donor , oxygen , carbon fibers , crystallography , chemistry , nanotechnology , nuclear magnetic resonance , optoelectronics , electrical engineering , physics , organic chemistry , chromatography , composite material , composite number , engineering
Al x Ga 1− x N (0.63≤ x ≤1) layers grown by hot‐wall metal‐organic chemical vapor deposition were intentionally doped with silicon at the atomic concentration of [Si] ∼ 2 × 10 18 cm −3 . Efficient silicon incorporation into the Al x Ga 1− x N layers was obtained for all Al contents, x , whereas the resistivity drastically increases for x > 0.84. Degradation of the structural quality and compensation by residual oxygen and carbon impurity were ruled out as possible explanations for the increased resistivity. Frequency dependent capacitance‐voltage measurements indicate that the Si donor is electrically active. Complementary electron paramagnetic resonance measurements suggest formation of stable Si‐related DX centers and increase in the activation energy of the silicon donor for x > 0.84.