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Carrier distributions in InGaN/GaN light‐emitting diodes
Author(s) -
Hammersley Simon,
Davies Matthew J.,
Dawson Philip,
Oliver Rachel A.,
Kappers Menno J.,
Humphreys Colin J.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451534
Subject(s) - quantum well , optoelectronics , light emitting diode , diode , quantum tunnelling , materials science , redistribution (election) , population , quantum , physics , optics , laser , quantum mechanics , demography , sociology , politics , political science , law
The distribution of carriers in InGaN/GaN quantum well light‐emitting diodes is frequently calculated using drift‐diffusion models. Using this type of approach, it is found that the holes are preferentially captured into the quantum wells closest to the p ‐type injection layer. This type of model, however, only deals with the initial capture of carriers into the quantum wells, and not any subsequent redistribution of carriers caused by carrier escape or tunnelling. However, thermally driven carrier redistribution in InGaN/GaN quantum wells has been reported, so in this work, we have studied the effects of carrier redistribution across the quantum well stack in a light‐emitting diode structure containing five quantum wells. We find that the holes are distributed amongst the available quantum wells with a more uniform population profile than would be predicted using a drift‐diffusion model.