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Free‐electron concentration and polarity inversion domains in plasmonic (Zn,Ga)O
Author(s) -
Sadofev Sergey,
Kalusniak Sascha,
Schäfer Peter,
Kirmse Holm,
Henneberger Fritz
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451533
Subject(s) - plasmon , polar , materials science , molecular beam epitaxy , inversion (geology) , doping , optoelectronics , wafer , electron , polarity (international relations) , wavelength , epitaxy , analytical chemistry (journal) , chemistry , nanotechnology , physics , layer (electronics) , paleontology , biochemistry , structural basin , astronomy , chromatography , cell , biology , quantum mechanics
Heavily Ga‐doped ZnO layers are grown on bulk ZnO wafers by molecular beam epitaxy. The layers grow in a two‐dimensional pseudomorphic mode with high structural quality under increase of the c ‐lattice constant up to free‐electron concentrations of 10 21 cm− 3 . Formation of Zn‐polar inversion domains in the O‐polar ZnO matrix is identified as the limiting factor for the incorporation of electrically active Ga. The domain formation can be inhibited by growing with larger excess of Zn. This results in a shift of surface plasmon frequency of ℏ Δ ω = 100 meV and allows for covering the telecommunication wavelength range.