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Self‐organized growth of catalyst‐free GaN nano‐ and micro‐rods on Si(111) substrates by MOCVD
Author(s) -
Foltynski B.,
Giesen C.,
Heuken M.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451508
Subject(s) - materials science , metalorganic vapour phase epitaxy , substrate (aquarium) , silicon , deposition (geology) , nanowire , optoelectronics , chemical vapor deposition , epitaxy , morphology (biology) , nanotechnology , silane , chemical engineering , buffer (optical fiber) , composite material , layer (electronics) , paleontology , oceanography , genetics , sediment , geology , engineering , biology , telecommunications , computer science
Our study shows the impact of the process parameters: predose before AlN buffer deposition, SiN x deposition time, GaN growth temperature and silane injection time on growth and morphology of GaN nanowires (NWs) formed by a self‐organized mechanism on a silicon substrate. We determined a process parameter window for successful GaN NW growth and show how the variation of studied parameters changes the NW morphology and density. The optimization of these process parameters led to high‐density straight GaN NWs, aligned perpendicular to the substrate. The use of a preflow before AlN buffer deposition was found to be important for the successful NW formation, and most interestingly, led to a difference in structural morphology for ammonia and TMAl predose.