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Dominant nonradiative centers in InGaN single quantum well by time‐resolved and two‐wavelength excited photoluminescence
Author(s) -
Julkarnain M.,
Murakoshi N.,
Islam A. Z. M. Touhidul,
Fukuda T.,
Kamata N.,
Arakawa Y.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451499
Subject(s) - photoluminescence , excited state , recombination , quantum well , wavelength , excitation , optoelectronics , materials science , atomic physics , spontaneous emission , physics , chemistry , optics , laser , biochemistry , quantum mechanics , gene
The nonradiative recombination processes in undoped InGaN single quantum well (SQW) grown by MOCVD method have been studied by time‐resolved and two‐wavelength excited photoluminescence. External quantum efficiency and carrier recombination lifetime decreases with increasing the excitation density which can be explained by an enhanced nonradiative recombination rate. A dominant nonradiative center with an optical activation energy of around 1.17 eV has been detected inside and/or hetero‐interface of SQW, which might be an important clue for determining their origin and eliminating them during growth process.