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Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light‐emitting diode heterostructures under laser excitation
Author(s) -
Prudaev Ilya,
Sarkisov Sergey,
Tolbanov Oleg,
Kosobutsky Alexey
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451497
Subject(s) - photoluminescence , terahertz radiation , optoelectronics , materials science , laser , femtosecond , heterojunction , quantum well , photoluminescence excitation , excitation , diode , terahertz spectroscopy and technology , laser diode , optics , physics , quantum mechanics
In this paper the results of experiments on terahertz generation from nitride light‐emitting diode heterostructures under two‐photon excitation by femtosecond laser pulses are reported. Dependencies of the photoluminescence and terahertz spectra on structural properties of the samples and intensity of laser pulses have been studied. It was found that the terahertz pulse amplitude increases and its spectrum shifts towards higher frequencies with an increasing number of quantum wells in the heterostructures. Photoluminescence spectral shape change at high excitation intensities was observed. The probable mechanisms explaining the observed experimental dependencies are discussed.