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Ultrathin InAlN/GaN heterostructures with high electron mobility
Author(s) -
Fang Y. L.,
Feng Z. H.,
Yin J. Y.,
Zhang Z. R.,
Lv Y. J.,
Dun S. B.,
Liu B.,
Li C. M.,
Cai S. J.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451493
Subject(s) - heterojunction , materials science , chemical vapor deposition , transmission electron microscopy , optoelectronics , superlattice , condensed matter physics , metalorganic vapour phase epitaxy , oscillation (cell signaling) , nanotechnology , layer (electronics) , epitaxy , chemistry , physics , biochemistry
The ultrathin InAlN/GaN heterostructure with 3 nm thickness was grown by metal organic chemical vapor deposition, and a room‐temperature mobility of 2175 cm 2 /V · s at sheet density of 1.39 × 10 13 cm −2 was achieved. Excellent crystalline and structural quality of the ultrathin InAlN/GaN heterostructure was revealed by transmission electron microscopy and atom force microscopy. The double periodicity of the Shubnikov–de Haas (SdH) oscillation was observed in the magnetoresistance measurements, and the energy separation between the two subbands was determined as 116 meV. It was found that the smaller interface electric field for the ultrathin InAlN/GaN was responsible for the smaller energy separations, which facilitated the occupation of the second subband.