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Study of high‐quality (11−22) semi‐polar GaN grown on nanorod templates
Author(s) -
Xu B.,
Yu X.,
Gong Y.,
Xing K.,
Bai J.,
Wang T.
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451490
Subject(s) - nanorod , materials science , wafer , template , bowing , full width at half maximum , optoelectronics , polar , crystal (programming language) , relaxation (psychology) , scanning electron microscope , nanotechnology , composite material , psychology , physics , theology , astronomy , computer science , social psychology , philosophy , programming language
(11−22) semi‐polar GaN overgrown on nanorod templates with different nanorod diameters has been systematically studied in terms of crystal quality, strain relaxation, wafer bowing and electrical properties. With increasing nanorod diameter from 300 to 827 nm, the full width at half maximum (FWHM) of the X‐ray rocking curve reduces from 0.20° to 0.15° along (1−100) direction and from 0.15° to 0.10° along (11−2−3) direction, respectively. The strain relaxation of the overgrown GaN layers has been significantly enhanced, leading to a reduction in wafer bowing from 0.0298 to 0.0091 cm −1 . The electron mobility in the overgrown GaN layers increases from 83 to 228 cm V −1 s −1 and from 52 to 124 cm V −1 s −1 along (1−100) and (11−2−3) directions, respectively.