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EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon‐rich conditions
Author(s) -
Savchenko Dariya,
Kalabukhova Ekaterina,
Shanina Bela,
Pöppl Andreas,
Yukhymchuk Volodymyr,
Lančok Jan,
Ubyivovk Evgenii,
Mokhov Evgenii
Publication year - 2015
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201451452
Subject(s) - electron paramagnetic resonance , hyperfine structure , spectral line , conduction band , chemistry , nitrogen , silicon , crystallography , carbon fibers , lattice constant , analytical chemistry (journal) , materials science , nuclear magnetic resonance , atomic physics , electron , physics , organic chemistry , astronomy , quantum mechanics , chromatography , composite number , composite material , diffraction , optics
X‐band field‐sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n‐type 15R SiC wafers grown under carbon (C)‐rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the 14 N ENDOR spectra of the C substituting quasicubic “k1”, “k2”, and “k3” positions five doublet lines due to 14 N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C‐rich n‐type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77 MHz were attributed to the N donors substituting “k1”, “k2”, and “k3” positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (C Si ) defects in C‐rich 15R SiC, which leads to the formation of C Si N C complexes with donor levels close to the conduction‐band minimum and isotropic 14 N HFI constants of 21.58 and 25.94 MHz. The energy levels of N donors have been evaluated by comparing the number of ENDOR spectra observed in C‐rich 15R SiC with different degrees of compensation.